Static information storage and retrieval – Systems using particular element – Magnetoresistive
Reexamination Certificate
2006-10-24
2006-10-24
Le, Thong Q. (Department: 2827)
Static information storage and retrieval
Systems using particular element
Magnetoresistive
Reexamination Certificate
active
07126844
ABSTRACT:
An apparatus for improving stability of a magnetoresistive random access memory over process and operational variations includes a current reference circuit that provides a reference current control signal to variable analog control circuitry. The variable analog control circuitry is connected to receive control signals from the current reference. The variable analog control circuitry generates a word current reference signal in response to the reference current control signal and further generates a source current reference signal in response to the reference current control signal. At least one word current source is connected to receive the word current reference signal. At least one sense current source is connected to receive the source current reference signal.
REFERENCES:
patent: 5946227 (1999-08-01), Naji
patent: 6246630 (2001-06-01), Hosokawa et al.
patent: 6341084 (2002-01-01), Numata et al.
patent: 6385111 (2002-05-01), Tran et al.
patent: 6407946 (2002-06-01), Maruyama et al.
patent: 6590804 (2003-07-01), Perner
patent: 6674679 (2004-01-01), Perner et al.
patent: 6683815 (2004-01-01), Chen et al.
patent: 6700814 (2004-03-01), Nahas et al.
patent: 6791874 (2004-09-01), Tran et al.
patent: 6795340 (2004-09-01), Sakimura et al.
patent: 6803615 (2004-10-01), Sin et al.
patent: 6804144 (2004-10-01), Iwata
patent: 6834017 (2004-12-01), Perner et al.
patent: 6873543 (2005-03-01), Smith et al.
patent: 2004/0085122 (2004-05-01), Perner et al.
patent: 2004/0228170 (2004-11-01), Brennan et al.
patent: 2005/0083748 (2005-04-01), Lamus et al.
Jones Day
Le Thong Q.
Union Semiconductor Technology Corporation
LandOfFree
Apparatus to improve stability of an MRAM over process and... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Apparatus to improve stability of an MRAM over process and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Apparatus to improve stability of an MRAM over process and... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3704821