Apparatus to decelerate and control ion beams to improve the...

Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

Reexamination Certificate

active

06946667

ABSTRACT:
An ion implantation method is disclosed in this invention. The disclosed method is for implanting a target wafer with ions extracted from an ion source traveling along an original ion beam path. The method includes steps of a) employing a set of deceleration electrodes disposed along the original ion beam path before the target wafer for decelerating and deflecting the ion beam to the target wafer; and b) employing a charged particle deflecting means disposed between the ion source and the set of deceleration electrodes for deflecting the ion beam away from original ion beam path and projecting to the set of electrodes with an incident angle for the set of electrodes to deflect the ion beam back to the original ion beam path for implanting the target wafer.

REFERENCES:
patent: 4980562 (1990-12-01), Berrian et al.
patent: 5196706 (1993-03-01), Keller et al.
patent: 5378899 (1995-01-01), Kimber
patent: 5892236 (1999-04-01), Takahashi et al.
patent: 6229148 (2001-05-01), Prall et al.
patent: 6541780 (2003-04-01), Richards et al.
patent: 6566661 (2003-05-01), Mitchell
patent: 6573517 (2003-06-01), Sugitani et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Apparatus to decelerate and control ion beams to improve the... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Apparatus to decelerate and control ion beams to improve the..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Apparatus to decelerate and control ion beams to improve the... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3424729

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.