Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus – For crystallization from liquid or supercritical state
Patent
1997-10-15
1999-09-14
Hiteschew, Felisa
Single-crystal, oriented-crystal, and epitaxy growth processes;
Apparatus
For crystallization from liquid or supercritical state
117208, 117911, C30B 3500
Patent
active
059517590
ABSTRACT:
This invention provides a apparatus and a method of pulling up single crystals, which respond to the weight increase of semiconductor single crystal produced by the CZ method. The retaining wire wind-up mechanisms 11, 12; multiple pairs of guide pipes 4a, 4c capable of being moved upward or downward with respect to the seed holder 1; and a plurality of retaining wires 13, 15, each retaining wire passing through one pair of the guide pipes and having its central portion to be bent into a "U" shape are provided in the central portion of the lifting wire 5. The single crystal 17 can be retained by the retaining wire 13, 15, if the guide pipes 4a, 4c are driven to move downward and the "U" shaped portions of the retaining wires 13, 15 are driven to engage with the necked portion 17b so as to lift single crystal 17. The load is determined based on the detected value coming from the weight sensors installed on the means for winding up the retaining wires. Furthermore, when the single crystal 17 has to be re-melted, the retaining wires 13, 15 is loosened and disengaged with the necked portion 17b.
REFERENCES:
patent: 4190630 (1980-02-01), Apilat et al.
patent: 5126113 (1992-06-01), Yamagishi et al.
patent: 5156822 (1992-10-01), Whipple, III
patent: 5173270 (1992-12-01), Kida et al.
Inagaki Hiroshi
Ishikawa Fumitaka
Hiteschew Felisa
Komatsu Electronic Metals Co. Ltd.
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