Apparatus of memory array using FinFETs

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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C257S344000

Reexamination Certificate

active

08067808

ABSTRACT:
A memory cell includes a FinFET select device and a memory element. In some embodiments a memory cell has a contact element coupled between a surface of the fin and the memory element.

REFERENCES:
patent: 6940747 (2005-09-01), Sharma et al.
patent: 2005/0199920 (2005-09-01), Lee et al.
patent: 102006023730 (2006-12-01), None

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