Apparatus of memory array using finfets

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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C257S401000, C257S344000

Reexamination Certificate

active

08039904

ABSTRACT:
A memory cell includes a FinFET select device and a memory element. In some embodiments a memory cell has a contact element coupled between a surface of the fin and the memory element.

REFERENCES:
patent: 7723786 (2010-05-01), Kakoschke et al.
patent: 2005/0199920 (2005-09-01), Lee et al.
patent: 102006023730 (2006-12-01), None

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