Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2010-05-21
2011-10-18
Weiss, Howard (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S401000, C257S344000
Reexamination Certificate
active
08039904
ABSTRACT:
A memory cell includes a FinFET select device and a memory element. In some embodiments a memory cell has a contact element coupled between a surface of the fin and the memory element.
REFERENCES:
patent: 7723786 (2010-05-01), Kakoschke et al.
patent: 2005/0199920 (2005-09-01), Lee et al.
patent: 102006023730 (2006-12-01), None
Kakoschke Ronald
Schruefer Klaus
Infineon - Technologies AG
Rao Steven
Schlazer Philip H.
Weiss Howard
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