Active solid-state devices (e.g. – transistors – solid-state diode – Test or calibration structure
Reexamination Certificate
2005-08-26
2009-10-20
Shingleton, Michael B (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Test or calibration structure
C257S431000, C257S459000, C257S461000, C348S308000
Reexamination Certificate
active
07605398
ABSTRACT:
The present invention discloses an apparatus of high dynamic-range CMOS image sensor and method thereof. The present invention utilize a pixel circuit outputting an output signal, wherein the pixel circuit has a photodiode and a plurality of transistors; and utilize a current source as a charge supplement unit to supply current into one end of the photodiode, and providing charges to the parasitic capacitor of the photodiode to delay saturation in the pixel circuit. In addition, a feedback circuit can be further designed connecting the pixel circuit. The feedback circuit receives the output signal from the pixel circuit and then outputs a control signal according to the output signal of the pixel circuit to control status of the charge supplement unit, and thereby increasing the dynamic range of the CMOS image sensor.
REFERENCES:
patent: 2005/0285959 (2005-12-01), Nakajima et al.
patent: WO03/094110 (2003-11-01), None
Chen Oscal T.-C.
Liu Wei-Jean
Yeh Hsiu-Fen
National Chung Cheng University
Rosenberg , Klein & Lee
Shingleton Michael B
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