Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2011-08-23
2011-08-23
Smith, Zandra (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257S310000, C438S197000, C438S591000, C438S593000
Reexamination Certificate
active
08003985
ABSTRACT:
Apparatus having a dielectric containing scandium and gadolinium can provide a reliable structure with a high dielectric constant (high k). In an embodiment, atomic layer deposition (ALD) can be used to form a nanolaminate dielectric of gadolinium oxide (Gd2O3) and scandium oxide (Sc2O3) In an embodiment, a dielectric structure can be formed by depositing gadolinium oxide by atomic layer deposition onto a substrate surface using precursor chemicals, followed by depositing scandium oxide onto the substrate using precursor chemicals, and repeating to form the thin laminate structure. A dielectric containing scandium and gadolinium may be used as gate insulator of a MOSFET, a capacitor dielectric in a DRAM, as tunnel gate insulators in flash memories, as a NROM dielectric, or as a dielectric in other electronic devices, because the high dielectric constant (high k) of the film provides the functionality of a much thinner silicon dioxide film.
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Ahn Kie Y.
Forbes Leonard
Micro)n Technology, Inc.
Perkins Pamela E
Schwegman Lundberg & Woessner, P.A.
Smith Zandra
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