Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-01-04
2011-01-04
Dang, Phuc T (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S369000, C257S373000, C327S540000, C327S543000
Reexamination Certificate
active
07863689
ABSTRACT:
Deep submicron wells of MOS transistors, implemented over an ungrounded well, exhibit two modes of operation: a current sink mode and a current source mode. While operation as a current sink is well understood and successfully controlled, it is also necessary to control the current provided in the current source mode of the well. A Schottky diode is connected between the well and the gate, the Schottky diode having a smaller barrier height than that of the PN junction of the well-to-source. For an NMOS transistor, current flows through the PN junction when the gate is high. When the gate is low, current flows through the Schottky diode. This difference of current flow results in a difference in transistor threshold, thereby achieving a dynamic threshold voltage using the current from the well when operating at the current source mode.
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Dang Phuc T
Glenn Michael A.
Glenn Patent Group
Semi Solutions, LLC.
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