Adhesive bonding and miscellaneous chemical manufacture – Differential fluid etching apparatus – With microwave gas energizing means
Patent
1994-02-01
1995-12-12
Dang, Thi
Adhesive bonding and miscellaneous chemical manufacture
Differential fluid etching apparatus
With microwave gas energizing means
20429832, 20429836, 20429837, 118723ER, 118723IR, 216 60, 216 67, H05H 100
Patent
active
054746426
DESCRIPTION:
BRIEF SUMMARY
FIELD OF THE INVENTION
This invention relates to the treatment of solid bodies and, more specifically, it deals with an apparatus for the plasma treatment of the surface of a solid body. The invention may be used, e.g. in electrical engineering, mechanical engineering, electronics and other fields.
BACKGROUND ART
Plasma technology for the treatment of solid bodies is now under intensive development to replace substantially liquid chemical kinds of treatment in all operations. Various kinds of processing of the surface of solid bodies exist, including heat treatment, plasmochemical cleaning and etching, and film forming.
Known in the art are plants in which a plasma medium is provided under a pressure of at least 10.sup.2 Pa. Such vacuum plasma treatment plants include a vacuum chamber having a gas evacuation system and incorporating a plasma generator having a plasma forming gas supply system and a support holder. A three-dimensional charge is excited in such vacuum plasma treatment plants, and the support is stationary. For the excitation of plasma, use is made of a high-frequency, SHF Super High Frequency, glow, or arc discharge which, according to the gas or cathode target material used, forms a desired plasma composition for etching or film deposition.
Higher vacuum under these conditions contributes to a more uniform surface treatment. However, a higher vacuum results in a decrease in the density of active particles and the lower flow of such particles towards the surface, so as to prolong the surface treatment period. This is one of the reasons why the throughput capacity of such plants is inadequate. In addition, low throughput capacity is caused by the need for the continuous maintenance of the vacuum, i.e. evacuation of the whole working volume of the chamber. This is especially pronounced where the plasma forming gas is to be replaced, when it is necessary to carry out the complete cleaning of particles from the chamber, so as to avoid having undesired impurities when starting a new cycle of surface treatment. This results in the need for a prolonged period of preparation of the plant for operation. When such plants are used for continuous manufacturing treatment processes, lock chambers are provided where there is a need for communication with atmosphere, so as to increase the throughput capacity. In such arrangements, contamination of the supports can result, which is extremely undesirable, particularly in electronic engineering.
SUMMARY OF THE INVENTION
These disadvantages are reduced in a plasma reactor described in U.S. Pat. No. 4,946,537 with a vacuum chamber which has a reagent gas supply system, a plasma generator, and at least one elctromagnetic coil which is positioned coaxially with the chamber. A specimen is mounted in a holder inside the chamber to extend in parallel with a magnetic field generated by the coil. A high-energy flow of charged high-density particles from the plasma is incident perpendicularly upon the surface of the specimen so as to carry out the treatment.
High-energy ions interacting with the surface give rise to radiation-induced defects, i.e., to disruptions of structure and atomization of the material being treated and initiate radiation-induced chemical reactions. As the degree of integration of chips grows higher, process layers in the active structures become thinner and thinner. Radition induced effects in such layers cause changes in electrical properties and can even result in complete rejection of elements of chips. Such a reactor cannot ensure the necessary high quality of treatment.
It is an object of the invention to increase throughput capacity and enhance the quality of treatment of solid bodies.
In one embodiment of the invention to be described an apparatus for plasma treatment, preferably with planar supports, comprises a plasma generator having a plasma forming gas supply system and a power supply, and a support holder, the plasma generator including a generator of a plasma jet under atmospheric pressure having a regulator of the cross-secti
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Ivanov Vladimir
Kulik Pavel
Logoshin Alexis
Pavlov George
Shvetchov Vecleslav
Dang Thi
Overseas Publishers Association
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