Apparatus for the reduction of the short-channel effect in a sin

Details Apparatus for the reduction of the short-channel effect in a sin Apparatus for the reduction of the short-channel effect in a sin

1981-06-30

1983-11-01

Popek, Joseph A.

Static information storage and retrieval

Read/write circuit

Flip-flop used for sensing

365203, G11C 1140

Patent

active

044133308

ABSTRACT:
A one-device, FET dynamic random access memory array is disclosed wherein a problem arising from the short-channel effect is reduced in single-polysilicon, one-device field effect transistor dynamic random access memory arrays where a portion of a word line is used as an electrode of a memory cell storage capacitor. When such word lines are accessed, boosted voltages can appear across the source-drain of FET devices of unaccessed memory cells causing them to conduct and spuriously lose information. This problem is minimized in such memory arrays by opening a pair of bit line switches so that the potential on an unselected bit line remains at the potential to which it was precharged. In this manner, the potential difference across the source-drain of the FETs of unselected memory cells can never exceed the potential to which all the bit lines are precharged.

REFERENCES:
patent: 3986180 (1976-10-01), Cade
patent: 4103342 (1978-07-01), Miersch et al.
"A 34 .mu.m.sup.2 DRAM Cell Fabricated with a 1 .mu.m Single-Level Polyoide FET Technology", by H. H. Chao et al., 1981 IEEE International Solid-State Circuits Conference Digest of Technical Papers, Feb. 1981, p. 152.
"A High Performance Sense Amplifier for a 5V Dynamic RAM", by J. J. Barnes et al., IEEE Journal of Solid State Circuits, vol. SC 15, No. 5, Oct. 19, 1980, p. 831.
"Field Effect Transistor Memory", by R. Kruggel, IBM Technical Disclosure Bulletin, vol. 14, No. 9, Feb., 1972, p. 2714.
"A 64 Kb MOS Dynamic RAM", by I. Lee, et al., 1979 IEEE International Solid State Circuits Conference, Feb. 1979, p. 146.

Affiliated with

Also associated with

Rating

Apparatus for the reduction of the short-channel effect in a sin does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Apparatus for the reduction of the short-channel effect in a sin, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Apparatus for the reduction of the short-channel effect in a sin will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2171610