Coating apparatus – Gas or vapor deposition – With treating means
Reexamination Certificate
2006-04-11
2006-04-11
Zervigon, Rudy (Department: 1763)
Coating apparatus
Gas or vapor deposition
With treating means
C118S715000, C156S345500
Reexamination Certificate
active
07025831
ABSTRACT:
Apparatus and process for conditioning a generally planar substrate, contained in a chamber isolatable from the ambient environment and fed with a conditioning gas which includes reactive gas. The apparatus includes a support for supporting the substrate in the chamber, the substrate being in a lower pressure reaction region of the chamber. A gas inlet is provided for feeding conditioning gas into a gas inlet region of the chamber which is at a higher pressure than the lower pressure reaction region so that the pressure differential causes the conditioning gas to flow toward the surface of the substrate wherein the conditioning gas component will chemically react with and condition the substrate surface, both said higher and lower pressure regions operating in a viscous flow regime. The substrate is supported such that a pressure bias is created across the surface of this substrate so that the gas, after it has chemically reacted with the substrate surface, flows outward from where it has reacted, off the substrate toward the periphery of the chamber and out a peripheral or central underside exhaust outlet. Gas feed may be provided to one or both sides the substrate and light activation of the substrate or conditioning gas may be provided on one or both sides.
REFERENCES:
patent: 4028135 (1977-06-01), Vig et al.
patent: 4160690 (1979-07-01), Shibagaki
patent: 4167669 (1979-09-01), Panico
patent: 4443533 (1984-04-01), Panico
patent: 4522674 (1985-06-01), Ninomiya et al.
patent: 4540466 (1985-09-01), Nishizawa
patent: 4568632 (1986-02-01), Blum et al.
patent: 4643799 (1987-02-01), Tsujii et al.
patent: 4678536 (1987-07-01), Murayama
patent: 4687544 (1987-08-01), Bersin
patent: 4705593 (1987-11-01), Haigh et al.
patent: 4711790 (1987-12-01), Moirshige
patent: 4741800 (1988-05-01), Yanazuki
patent: 4756047 (1988-07-01), Hayashi et al.
patent: 4780169 (1988-10-01), Stark et al.
patent: 4792378 (1988-12-01), Rose et al.
patent: 4857140 (1989-08-01), Loewenstein
patent: 4857382 (1989-08-01), Liu et al.
patent: 4871416 (1989-10-01), Fukuda
patent: 4936940 (1990-06-01), Kawasumi et al.
patent: 4986216 (1991-01-01), Ohmori et al.
patent: 5028560 (1991-07-01), Tsukamoto et al.
patent: 5030319 (1991-07-01), Nishino et al.
patent: 5119760 (1992-06-01), McMillan et al.
patent: 5178682 (1993-01-01), Tsukamoto et al.
patent: 5178721 (1993-01-01), Sugino
patent: 5201994 (1993-04-01), Nonaka et al.
patent: 5213997 (1993-05-01), Ishihara et al.
patent: 5217559 (1993-06-01), Moslehi et al.
patent: 5228206 (1993-07-01), Grant et al.
patent: 5234540 (1993-08-01), Grant et al.
patent: 5288684 (1994-02-01), Yamazaki et al.
patent: 5332442 (1994-07-01), Kubodera et al.
patent: 5350480 (1994-09-01), Gray
patent: 5439553 (1995-08-01), Grant et al.
patent: 5470799 (1995-11-01), Itoh et al.
patent: 5580421 (1996-12-01), Hiatt et al.
patent: 5762755 (1998-06-01), McNeilly et al.
patent: 5781693 (1998-07-01), Ballance et al.
patent: 5789755 (1998-08-01), Bender
patent: 5814156 (1998-09-01), Elliott et al.
patent: 5992429 (1999-11-01), Peckman
patent: 5998766 (1999-12-01), Mizosaki et al.
patent: 6015759 (2000-01-01), Khan et al.
patent: 6165273 (2000-12-01), Fayfield et al.
patent: 6287413 (2001-09-01), Fayfield et al.
patent: 1180187 (1970-02-01), None
patent: 2 181 458 (1987-04-01), None
patent: 1-235232 (1983-09-01), None
patent: 360113420 (1985-06-01), None
patent: 361206230 (1986-09-01), None
patent: 362250634 (1987-10-01), None
patent: 363066930 (1988-03-01), None
patent: 363241923 (1988-10-01), None
patent: 402058822 (1990-02-01), None
patent: 402294027 (1990-12-01), None
patent: 403112132 (1991-03-01), None
patent: 4-25116 (1992-01-01), None
patent: 404214868 (1992-08-01), None
patent: 5-047741 (1993-02-01), None
patent: 06-093454 (1994-06-01), None
patent: WO 90/13910 (1990-11-01), None
patent: WO 91/03075 (1991-03-01), None
patent: WO 91/03075 (1991-07-01), None
patent: WO 92/22084 (1992-10-01), None
patent: WO 96/19825 (1996-06-01), None
Comprehensive Inorganic Chemistry, Pergamon Press, Jul. 1973, pp. 1335.
D.A. Skoog, J.J. Leary, Principles of Instrumental Analysis, Fourth Ed., 1992, pp. 97-98.
Ruzyllo, section 7-3 of Semiconductor Wafer Cleaning Technology. (Feb. 1993).
JAPIO patent abstract JP 01-104682 (Apr. 1989).
T. Aoyama et al., Surface Cleaning for Si Epitaxy Using Photoexcited Fluorine Gas, J. Electrochem. Soc., vol. 140, No. 2. pp. 366-371, Feb. 1993.
Patent abstract of Japan, abstract of JP 63-297563 (May 1988).
Patent abstract 62-166529 (Jul. 1987).
PCT International Search Report for PCT/US95/16649.
Superheat2 Rapid Wafer Heating System product brochure.
J.R. Vig. “UV/Ozone Cleaning of Surfaces”, J. Vac. Sci. Technol. A3 (3), 1027-134, 1985.
L. Lowenstein et al., “Chemical Etching of Thermally Oxidized Silicon Nitride: Comparison of Wet and Dry Etching Methods”, J. Electrochem. Soc. vol. 138, No. 5, 1389-1394, 1991.
Aoyama et al., “Removing Native Oxide from Si(001) Surfaces Using Photoexcited Fluorine Gas”, Appl. Phys. Lett. 59(20), 2576-2578, 1991.
T. Aoyama et al., “Silicon Surface Cleaning Using Photoexcited Fluorine Gas Diluted with Hydrogen”, J. Electrochem. Soc. vol. 140, No. 6, 1704-1708, 1993.
T. Aoyama et al, “Surface Cleaning for Si Epitaxy Using Photoexcited Fluorine Gas”, J. Electrochem. Soc., vol. 140, 366-370, 1993.
Butterbaugh Jeffery W.
Fayfield Robert T.
Gray David C.
Heitzinger John
Hiatt Fred C.
FSI International Inc.
Vidas Arrett & Steinkraus
Zervigon Rudy
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