Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering
Patent
1987-12-24
1989-07-25
Weisstuch, Aaron
Chemistry: electrical and wave energy
Processes and products
Coating, forming or etching by sputtering
20419234, 204298, 156345, 156626, 156627, 156635, 156643, 2504921, B23K 1500
Patent
active
048510971
ABSTRACT:
The present invention relates to an apparatus for repairing a pattern film of a photomask, reticle, X-ray mask, semiconductor, etc. In the apparatus, a focused ion beam is applied to an excess portion of a pattern film which is formed on a substrate. The excess portion of the pattern film is removed by means of ion sputtering. For repairing an excess portion of the pattern film, an etching gas is provided to a position that is being irradiated with the scanning focused ion beam thereby increasing the reliability of repairing and carrying out repair of the excess portion of the pattern film with good quality. Further, the removal speed of the excess portion film is improved.
REFERENCES:
patent: 4609809 (1986-09-01), Yamaguchi et al.
patent: 4698236 (1987-10-01), Kellogg et al.
M. W. Geis et al., J. Vac. Sci. Technol., vol. 19, pp. 1390-1393 (1981).
S. Hosaka et al., J. Vac. Sci. Technol., vol. 16, pp. 913-917 (1979).
WO-A-8 602 774 (Ion Beam Systems), Publication date May 9, 1986.
Journal of Vacuum Science & Technology/B, vol. 3, No. 1, second series, Jan./Feb. 1985, pp. 67-70, Woodbury, N.Y., U.S.; Y. Ochiai, et al.: "Pressure and Irradiation Angle Dependence of Maskless Ion Beam Assisted Etching of GaAs and Si".
Hattori Osamu
Nakagawa Yoshitomo
Sasaki Sumio
Sato Mitsuyoshi
Yasaka Anton
Seiko Instruments Inc.
Weisstuch Aaron
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