Adhesive bonding and miscellaneous chemical manufacture – Differential fluid etching apparatus – With microwave gas energizing means
Reexamination Certificate
1999-07-22
2001-10-23
Dang, Thi (Department: 1763)
Adhesive bonding and miscellaneous chemical manufacture
Differential fluid etching apparatus
With microwave gas energizing means
C118S7230AN, C118S7230IR, C118S728000, C216S067000, C438S729000
Reexamination Certificate
active
06306244
ABSTRACT:
FIELD OF THE INVENTION
The invention relates to an apparatus and method for reducing polymer buildup in a plasma processing chamber, and more particularly, the invention relates to the introduction of clearance gas into a gap in a substrate holder to avoid polymer deposition on exposed surfaces of the substrate holder.
BACKGROUND OF THE INVENTION
Vacuum processing chambers are generally used for chemical vapor depositing (CVD) and etching of materials on substrates by supplying process gas to the vacuum chamber and application of an RF field to the gas. Examples of parallel plate, inductively coupled plasma (TCP™, also called ICP), and electron-cyclotron resonance (ECR) reactors are disclosed in commonly owned U.S. Pat. Nos. 4,340,462; 4,948,458; and 5,200,232. The substrates are held in place within the vacuum chamber during processing by substrate holders. Conventional substrate holders include mechanical clamps and electrostatic clamps (ESC). Examples of mechanical clamps and ESC substrate holders are provided in commonly owned U.S. Pat. No. 5,262,029 and commonly owned U.S. Pat. No. 5,671,116. Substrate holders in the form of an electrode can supply radiofrequency (RF) power into the chamber, as disclosed in U.S. Pat. No. 4,579,618.
Substrates which are etched in an oxide etching process generally include an underlayer, an oxide layer which is to be etched, and a photoresist layer formed on top of the oxide layer. The oxide layer may be one of SiO
2
, BPSG, PSG, or other oxide material. The underlayer may be Si, TiN, silicide, or other underlying layer or substrate material. During processing of substrates, unwanted polymer deposition on the surfaces of the chamber can occur. For instance, when the chamber heats up to above 80° C. during oxide etching, a reaction can occur wherein CF
3
forms CF
2
and HF. The formation of CF
2
leads to an increase in polymer deposition on surfaces within the chamber. These deposits may be removed between successive processing of wafers to provide more consistent processing of the wafers.
During etching of a substrate such as a semiconductor wafer in a plasma reactor, the polymer can build up on the cooled, exposed surfaces of the chamber including exposed surfaces of a substrate support such as an electrostatic chuck and other surfaces such as a dielectric annular cap/focus ring surrounding the substrate support. This buildup may cause problems if it flakes off and is carried onto the top surface of the electrostatic chuck. These contaminants on the top surface of the chuck can prevent the chuck from operating properly to hold the wafer securely. In addition, the contaminants can allow helium which is supplied under the wafer as a cooling medium to leak from beneath the wafer and reduce the wafer cooling. The contaminants can also be deposited on and adversely affect the wafer itself. The buildup of polymer can be removed by a cleaning step performed between the processing of successive wafers. Generally, cleaning can be performed by injecting oxygen into the chamber, striking a plasma and reacting the oxygen with the deposited polymer to achieve an aggressive oxygen clean of the processing chamber.
One area in which deposits of polymer can occur in a processing chamber is a narrow gap between the electrostatic chuck on which the wafer is supported and a focus ring which surrounds the electrostatic chuck. This gap allows for differences in manufacturing tolerances and thermal expansion of the chuck and focus ring. However, process gas and volatile byproducts within the chamber may migrate into the gap and cause undesirable polymer deposits in this area which may flake off and cause contamination of the wafer and/or chamber.
The aggressive oxygen cleaning of the processing chamber is undesirable because it adds to the wafer cycle time, reducing through-put of the system. In addition, the aggressive oxygen clean will shorten the lives of members within the processing chamber including the electrostatic clamp and focus ring due to ion bombardment of these members. As such, it would be desirable if substrate processing could be carried out without a need for the aggressive oxygen cleaning step to thereby shorten cycle time and extend the life of chamber components.
SUMMARY OF THE INVENTION
The present invention addresses the problem of deposition of polymer in a plasma processing chamber by providing a clearance gas stream which reduces polymer build-up on the substrate support.
According to one aspect of the present invention, a plasma processing apparatus includes a processing chamber, a substrate support having an outer surface, a member such as a focus ring supported on and surrounding the outer surface, the member having an inner surface forming a narrow gap between the outer surface of the substrate support and the member, the gap being in fluid communication with an interior of the processing chamber, and a clearance gas supply in fluid communication with the gap supplying clearance gas to the gap to block the migration of process gas and volatile byproducts thereof into the gap.
According to a further aspect of the present invention, a method of controlling polymer deposition within a plasma processing chamber includes placing a substrate on a substrate holder within the processing chamber, and introducing a clearance gas into a gap between the substrate holder and a member surrounding the substrate holder at a flow rate sufficient to prevent process gas in the processing chamber from passing into the gap. In the case of etching the substrate, the clearance gas flow rate is maintained below a level which would adversely affect edge etch performance.
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Cook Joel M.
Kennedy William S.
Maraschin Robert A.
Schoepp Alan M.
Wicker Thomas E.
Burns Doane , Swecker, Mathis LLP
Dang Thi
Lam Research Corporation
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