Apparatus for reducing electrical shorts from the bit line...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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C257S303000, C257S306000

Reexamination Certificate

active

06894332

ABSTRACT:
A stress buffer and dopant barrier in the form of a TetraEthylOrthoSilicate (TEOS) film is deposited after the capacitor cell plate has been etched and cleaned to thereby eliminate electrical shorts from the bit line to the cell plate.

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