Apparatus for random access memory array self-repair

Details Apparatus for random access memory array self-repair Apparatus for random access memory array self-repair

2001-12-12

2004-02-24

Nelms, David (Department: 2818)

Static information storage and retrieval

Read/write circuit

Bad bit

C365S201000, C365S189020, C365S189050, C365S189120, C365S230020, C365S230030, C365S230080

Reexamination Certificate

active

06697290

ABSTRACT:

FIELD OF THE INVENTION
The present invention relates generally to random access memories (RAM) in integrated circuits and, more particularly, to the test of such circuits and, even more particularly, to their test and repair on-chip.
BACKGROUND OF THE INVENTION
Motivated by the desire for both lower cost and higher performance, integrated circuit (IC) technology has moved throughout its history toward building larger and larger circuits comprising more and more devices. The development of random access memory (RAM) integrated circuits have shared in this movement. In the sense of containing a larger number of memory cells where each cell can store one bit, the larger a RAM becomes, the more difficult and expensive it is to test it. Also, the more expensive the cost of a defect in the circuit, as a single defect can result in the loss of the whole chip.
Not only are RAM's fabricated as stand-alone chips, but they are also built embedded as function blocks in other integrated circuits. Such integrated circuits could be designed and produced as standard chips intended for a variety of applications and as application specific integrated circuits (ASIC's).
With the size and complexity of modern integrated circuits including RAM's, testing has become an important issue. Size and cost constraints limit the area on the integrated circuit available for use as wire bonding pads, flip-chip solder bumps, and the like with the resultant effect of limiting access to the various functioning areas of the chip. So, not all functions of the chip are externally available for direct test. Even if connections to some of these areas were available, the long traces and additional external circuitry necessary to access them would introduce signal delays that could render the results of such testing questionable. Thus of necessity, some testing circuitry is now often included on-chip.
On-chip testing also has its share of difficulties as chip area available for testing is limited, as is accessibility to nodes for testing. Delays introduced by trace lengths also continue to be an issue. In addition unless the chip is designed for mass production, the costs associated with design, manufacturing, and test can be prohibitive.
Additional, redundant circuitry is often included in large integrated circuits. Techniques available, as for example laser fusing, permit the removal of defective parts of the IC and its replacement with the redundant part. This process is cost effective, since on average the added cost of the redundant circuitry is less than the cost associated with the yield loss without the additional circuitry. The addition of redundant circuitry is especially valuable for circuits with repeating structure function blocks, such as RAM and other types of memory. In such circuits a limited number of defective cells can be replaced with the redundant cells embedded in the circuitry. Once again, however, unless the chip is designed for mass production, design costs can be prohibitive.
Thus since current techniques for repairing defective cells in RAM function blocks typically require additional processing to correct these defects, there is a need for enhanced means for correcting such defects.
SUMMARY OF THE INVENTION
In one representative embodiment, an electronic circuit for self-repair of a random access memory array is disclosed wherein the random access array has a plurality of memory storage cells, wherein the storage cells are organized into a plurality of slice arrays. The electronic circuit includes a remap register associated with each slice array, a remap selector circuit associated with each slice array, a write selector circuit associated with each slice array, and a read selector circuit associated with each slice array. When a defect is present in one of the memory storage cells of bit-slice, the remap register informs the remap selector circuit of the defect. When, the remap selector circuit is informed that the defect is present, the remap selector circuit instructs the write selector circuit to redirect data intended for storage in the slice array to an adjacent slice array, otherwise, the remap selector circuit instructs the write selector circuit to direct data intended for storage in the slice array to that slice array. When, the remap selector circuit is informed that the defect is present, the remap selector circuit instructs the read selector circuit to redirect data read from the adjacent slice array to the output of slice array, otherwise, the remap selector circuit instructs the read selector circuit to direct data read from the slice array to that slice array.
Other aspects and advantages of the present invention will become apparent from the following detailed description, taken in conjunction with the accompanying drawings, illustrating by way of example the principles of the invention.


REFERENCES:
patent: 5742556 (1998-04-01), Tavrow et al.
patent: 5796662 (1998-08-01), Kalter et al.
patent: 6324088 (2001-11-01), Keeth et al.

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