Apparatus for producing diamonds by chemical vapor deposition an

Coating processes – Direct application of electrical – magnetic – wave – or... – Plasma

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118723, 264 14, 264 81, 156DIG68, 423446, C23C 1648

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active

052041450

ABSTRACT:
An improved method and apparatus are disclosed for producing large area diamond depositions. A mixture of a carbon compound such as methane, hydrogen and argon is introduced into a DC arc plasma torch to form a plasma jet. The plasma jet is directed and trapped into a partially enclosed chemical vapor deposition zone confined within a reaction chamber of a CVD process. The chemical vapor deposition zone is formed by walls wherein at least one such wall is a rotating substrate cooled to a set temperature. The plasma jet containing radicalized hydrogen and a carbon compound is impinged on the rotating substrate to produce large area diamond layer.

REFERENCES:
patent: 4987002 (1991-01-01), Sakamoto
Article-Japanese Journal of Applied Physics, vol. 27, No. 9, Sep. 1988 pp. L1600-L1602 -Rapid Growth of Diamond Films by Arc Discharge Plasma CVD -Akatsuka et al.
Article-Appl. Phys. Lett. 51 (10) Sep. 7, 1987 -Synthesis of Diamond Films in a rf Induction Thermal Plasma -Matsumoto et al. pp. 737-739.
Article-Rev. Sci. Instrum. 60(2), Feb. 1989 -Development of a New Microwave Plasma Torch and Its Application to Diamond Synthesis -Mitsuda et al. pp. 249-252.
Article -C&EN, May 15, 1989 -Emerging Technology of Diamond Thin Films -Bachmann et al. pp. 24-39.

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