Apparatus for producing a silicon single crystal from a silicon

Details Apparatus for producing a silicon single crystal from a silicon Apparatus for producing a silicon single crystal from a silicon

1982-04-14

1985-05-07

Lacey, David L.

Chemical apparatus and process disinfecting, deodorizing, preser

Chemical reactor

Including specific material of construction

422249, 156608, 156617SP, 156DIG83, 156DIG99, 432264, 432265, 427 94, C30B 1534

Patent

active

045157553

ABSTRACT:
An apparatus for producing silicon single crystal from melted silicon by the pull-up process using a seed crystal, wherein at least a portion of a device in contact with the melted silicon includes a layer of silicon nitride precipitated from gaseous phase and comprising 20% or above of .beta. phase, or comprising 80% or above of .alpha. phase whose crystal grains have grain diameters of 5 .mu.m or above at a ratio of 10% or more.

REFERENCES:
patent: 4090851 (1978-05-01), Berkman et al.
patent: 4213940 (1980-07-01), Zerbst
patent: 4264565 (1981-04-01), Inoue et al.
patent: 4298629 (1981-11-01), Nozari et al.
patent: 4312923 (1982-01-01), Hirai et al.
patent: 4346068 (1982-08-01), Kasai et al.
patent: 4368180 (1983-01-01), Inoue et al.
R. D. Pehlke et al., High-Temperature Thermodynamics of the Silicon, Nitrogen, Silicon-Nitride System, Transactions of the Metallurgical Society of AIME, vol. 215, Oct. 1959, pp. 781-785.
William J. Croft et al., Editor, Review of Silicon Nitride, Review of Ceramic Technology, Feb. 1974, Issue No. 26, pp. 1-12.
Journal of Electrochemical Society, vol. 123, pp. 846-852, 1976, R. E. Chaney and C. J. Varker.
Journal of Material Science, vol. 11, pp. 593-603, 1976; K. Niihara and T. Hirai.

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