Apparatus for process for growing crystals of semiconductor mate

Details Apparatus for process for growing crystals of semiconductor mate Apparatus for process for growing crystals of semiconductor mate

1989-10-12

1993-03-23

Lewis, Michael

Chemical apparatus and process disinfecting, deodorizing, preser

Chemical reactor

Including specific material of construction

422248, C30B 3500

Patent

active

051961733

ABSTRACT:
In apparatuses for melting semiconductor material and growing single crystals of semiconductor material, the apparatus comprising:

REFERENCES:
patent: 2892739 (1959-06-01), Rusler
patent: 3637439 (1972-01-01), DeBie
patent: 4609425 (1986-09-01), Mateika et al.
patent: 4936949 (1990-06-01), Kida et al.
patent: 4938837 (1990-07-01), Tada et al.
patent: 4944834 (1990-07-01), Tada et al.
English Translation of JP-62-275088, Tada et al., Nov. 30, 1992.
"Properties of Gap Single Crystals" Journal of Electrochemical Society, vol. 118, No. 2, Feb. 1971, pp. 307-312.

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