Apparatus for optically pre-programming...

Static information storage and retrieval – Systems using particular element – Amorphous

Reexamination Certificate

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C365S148000, C365S113000, C365S215000

Reexamination Certificate

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11499237

ABSTRACT:
In an embodiment, a phase change non-volatile memory includes a number of memory cells. The memory cells include a phase change material which may transition between two memory states. The phase change material has different electrical properties in different states. The memory cells may be electrically addressable and include a transistor in each cell to electrically read and write data to the cell. An energy beam may be used to pre-program the device by heating selected memory cells, and consequently changing the state of the phase change material.

REFERENCES:
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patent: 5051950 (1991-09-01), Evans, Jr. et al.
patent: 6317392 (2001-11-01), Lee et al.
patent: 6970413 (2005-11-01), Gibson et al.
patent: 7106622 (2006-09-01), Nangle
patent: 2003/0128568 (2003-07-01), Nangle
patent: 2005/0259498 (2005-11-01), Nangle

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