Apparatus for monitoring ion-implantation input parameter in...

Details Apparatus for monitoring ion-implantation input parameter in... Apparatus for monitoring ion-implantation input parameter in...

2006-05-09

2006-05-09

Wells, Nikita (Department: 2881)

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

C250S492300, C250S492100

Reexamination Certificate

active

07041990

ABSTRACT:
An input parameter monitoring apparatus is disclosed wherein input parameters for ion implantation can be stored in a database during an ion implantation process, thereby allowing a user to monitor the operational history from a remote location. A method of monitoring input parameters created during an ion implantation process in a semiconductor fabricating device includes collecting log data generated by a plurality of ion implantation devices, listing the collected log data in a database in chronological order and updating the database substantially contemporaneously during said process. The log data can be processed to enable textual or graphical display. A LAN connects a local computer connected via input ports to plural ion-imp devices and a remote computer, thereby enabling remote computer monitoring of the operational process and possibly interaction.

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