Apparatus for mass-producing silicon-based thin film and...

Details Apparatus for mass-producing silicon-based thin film and... Apparatus for mass-producing silicon-based thin film and...

2011-04-19

2011-04-19

Ghyka, Alexander G (Department: 2812)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Amorphous semiconductor

C438S771000, C438S788000, C257SE21269

Reexamination Certificate

active

07927982

ABSTRACT:
A silicon-based thin film mass-producing apparatus, including transparent electrodes placed to face in parallel to corresponding counter electrodes with a space therebetween, and silicon-based thin films are deposited on the transparent electrodes by feeding a raw material gas for depositing the silicon-based thin films into the chamber and by applying a DC pulse voltage to the counter electrodes to generate plasma. Unlike methods in which a radio frequency voltage is intermittently applied to perform discharge, a high plasma density distribution does not occur, and in-plane film thickness distribution does not occur. Furthermore, since the DC pulse voltage rises sharply, the ON period can be shortened. As a result, generation of a sheath ceases in the transient state before reaching the steady state, and the thickness of the sheath is small, which allows the space between the counter and transparent electrodes to decrease.

REFERENCES:
patent: 2002/0056415 (2002-05-01), Mashima et al.
patent: 2004/0161534 (2004-08-01), Saito et al.
patent: 2000-223424 (2000-08-01), None

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