Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus – For crystallization from liquid or supercritical state
Patent
1997-09-30
1999-12-28
Hiteshew, Felisa
Single-crystal, oriented-crystal, and epitaxy growth processes;
Apparatus
For crystallization from liquid or supercritical state
117218, 117222, 117917, C30B 3500
Patent
active
060076259
ABSTRACT:
This invention provides a method and a apparatus capable of manufacturing single crystals with an oxygen density of less than 12.times.10.sup.17 atoms/cm.sup.3 or less than 10.times.10.sup.17 atoms/cm.sup.3, and wherein the oxygen density of the single crystal produced is uniformly distributed along its longitudinal axis. The electrical power inputted into the main heater 6 surrounding the quartz crucible 4 and the top heater 9 shaped like a reverse frustrated cone and disposed above the quartz crucible 4, is controlled to keep the temperature of the melt 5 in a preset range during the process of pulling up the single crystal silicon 10. When combining the main heater 6 and the top heater 9, the heat emitted from the main heater 6 can be kept small, and the heat load on the quartz crucible 4 and the amount of oxygen released from the quartz crucible 4 and dissloved into melt 5 can be reduced. Therefore, a single crystal of low oxygen density and with uniformly distributed oxygen density along its longitudinal axis can be obtained. Furthermore, the single-crystal silicon 10 can be assigned a proper thermal history. In the above process, if a magnetic field is applied to the melt, then single crystals of much lower oxygen density can be obtained.
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Inagaki Hiroshi
Ishikawa Fumitaka
Tomioka Junsuke
Hiteshew Felisa
Komatsu Electronic Metals Co. Ltd.
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