Apparatus for manufacturing silicon single crystal, method...

Details Apparatus for manufacturing silicon single crystal, method... Apparatus for manufacturing silicon single crystal, method...

2005-07-29

2008-05-06

Hiteshew, Felisa (Department: 1792)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Having pulling during growth

C117S015000, C117S201000, C117S214000

Reexamination Certificate

active

07368011

ABSTRACT:
The apparatus for manufacturing a silicon single crystal includes: a crucible for storing molten silicon; a pulling-up device for pulling up a silicon single crystal from the molten silicon in the crucible to grow; a detecting device for detecting a position of the crucible in a vertical direction; and a control device for controlling a pulling rate for the silicon single crystal by the pulling-up device, based on the detected position of the crucible.

REFERENCES:
patent: 5846318 (1998-12-01), Javidi
patent: 5961716 (1999-10-01), White et al.
patent: 7172656 (2007-02-01), Takanashi et al.
patent: 2000-143388 (2000-05-01), None
patent: 2001-220285 (2001-08-01), None

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