Apparatus for manufacturing silicon single crystal, method...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C117S015000, C117S201000, C117S214000

Reexamination Certificate

active

07368011

ABSTRACT:
The apparatus for manufacturing a silicon single crystal includes: a crucible for storing molten silicon; a pulling-up device for pulling up a silicon single crystal from the molten silicon in the crucible to grow; a detecting device for detecting a position of the crucible in a vertical direction; and a control device for controlling a pulling rate for the silicon single crystal by the pulling-up device, based on the detected position of the crucible.

REFERENCES:
patent: 5846318 (1998-12-01), Javidi
patent: 5961716 (1999-10-01), White et al.
patent: 7172656 (2007-02-01), Takanashi et al.
patent: 2000-143388 (2000-05-01), None
patent: 2001-220285 (2001-08-01), None

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Apparatus for manufacturing silicon single crystal, method... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Apparatus for manufacturing silicon single crystal, method..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Apparatus for manufacturing silicon single crystal, method... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3986318

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.