Apparatus for manufacturing silica film

Details Apparatus for manufacturing silica film Apparatus for manufacturing silica film

1998-06-26

2001-08-28

Morris, Terrel (Department: 1771)

Coating apparatus

Gas or vapor deposition

Reexamination Certificate

active

06280525

ABSTRACT:

BACKGROUND OF THE INVENTION
1. Field of the Invention
The present invention relates to an apparatus for manufacturing a silica film used for manufacturing an optical device, and a method for manufacturing a silica film using the same. More particularly, the invention relates to an apparatus for manufacturing a silica film using a flame hydrolysis deposition method and a method for manufacturing a silica film using the same.
2. Description of the Related Art
A silica film is used in various typical optical devices. The silica film is formed by a chemical vapor deposition method or a flame hydrolysis deposition method. The flame hydrolysis deposition method is more common, since it has a high deposition rate and thus ensures high productivity. In particular, in the flame hydrolysis deposition method, about twenty 4-inch Si wafers are mounted on a round plate and then the plate is rotated. Subsequently, a torch, in which a flame is formed by a supplied material to generate silica, is reciprocated in a straight line from the center of the plate where the silicon substrate (silicon wafer) is mounted to the edge, to thereby uniformly deposit the silica.
However, by the flame hydrolysis deposition method, each batch consists of twenty wafers. Thus the production must be stopped between batches, reducing the productivity.
SUMMARY OF THE INVENTION
To solve the above problem, it is an objective of the present invention to provide an apparatus for manufacturing a silica film, having high productivity.
It is another objective of the present invention to provide a method for manufacturing a silica film using the apparatus.
Accordingly, to achieve the first objective, there is provided an apparatus for manufacturing a silica film including: a conveyor including a mounting unit where a plurality of wafers are loaded, for moving transferring the mounted wafers; a deposition part for generating flames to deposit silica soot on the plurality of wafers, and being located above the conveyor; a calcination part, adjacent to the deposition part, for removing water from the silica soot; and a sintering part, adjacent to the calcination part, for densifying the calcined silica soot to form a silica film.
The mounting unit is formed on the surface of the conveyor, as wafer shaped depressions. The conveyor includes one, selected from the group consisting of Al
2
O
3
, mullite, SiC, anode-oxidized Al
2
O
3
and anode-oxidized tungsten. The deposition part includes a plurality of torches for supplying a gaseous material to form flames and a transfer device for moving the torch.
To achieve the second objective, there is provided a method for manufacturing a silica film, comprising the steps of: (a) loading a plurality of wafers on a mounting unit of a conveyor, using mounting means; (b) moving the plurality of loaded wafers with the conveyor to a deposition part to deposit silica soot on the plurality of wafers; (c) moving the wafers with the conveyor from the deposition part to a calcination part to remove water from the silica soot; and (d) moving the wafers using the conveyor from the calcination part to a sintering part to densify the silica soot and form a silica film.
The water is removed from the silica soot at 700° C. for approximately 30 min. The silica soot is densified at 1250~1300° C. for 2~3 hours. The silica soot is formed by a flame hydrolysis deposition method. The surface of the silica film can be polished after step (d) of forming the silica film. The surface of the silica film is polished using one method selected from the group consisting of mechanical polishing, chemical polishing and chemical mechanical polishing.
According to the apparatus for manufacturing a silica film of the present invention, the process of manufacturing the silica film can be continuously performed, to thereby enhance productivity. Also, the processed wafer is not exposed to air after depositing the silica soot, to thereby suppress any deterioration of the silica film due to contamination and water.


REFERENCES:
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patent: 5174881 (1992-12-01), Iwasaki et al.
patent: 5593741 (1997-01-01), Ikeda
patent: 5667547 (1997-09-01), Christiansen et al.
patent: 5776254 (1998-07-01), Yuuki et al.
patent: 5863604 (1999-01-01), Hunt et al.
patent: 1260233 (1972-01-01), None

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