Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus – For crystallization from liquid or supercritical state
Patent
1997-06-13
1999-08-03
Hiteshew, Felisa C.
Single-crystal, oriented-crystal, and epitaxy growth processes;
Apparatus
For crystallization from liquid or supercritical state
117213, 117218, 117222, 117911, C30B 3500
Patent
active
059320087
ABSTRACT:
In this invention, three equally spaced and "L" shaped hooks 6B are rotatably supported on the upper peripheral wall of the body 6A of the seed holder 6 at pivots 6E. A radiation screen 7 is hung at the front ends of the hooks 6B via three engaging fixtures 6C affixed on its upper rim. The radiation screen 7 shaped like a hollow trancated cone, is used to surround the lower end of the single-crystal being lifted from the quartz crucible 3 which is disposed within the main chamber 1. According to the apparatus for manufacturing a single-crystal which can perform the descending or ascending movements of the radiation screen, the setting operation, and the lifting operation consecutively and automatically. Therefor the apparatus can enhance the productivity and avoid any problems with process automation, furthermore, it is compatible with conventional equipment.
REFERENCES:
patent: 5443034 (1995-08-01), Everts
patent: 5450814 (1995-09-01), Shiraishi et al.
Hiraishi Yoshinobu
Shimomura Koichi
Hiteshew Felisa C.
Komatsu Electronic Metals Co. Ltd.
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