Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus – For crystallization from liquid or supercritical state
Patent
1997-06-13
1999-08-10
Hiteshew, Felisa
Single-crystal, oriented-crystal, and epitaxy growth processes;
Apparatus
For crystallization from liquid or supercritical state
117200, 117201, 117202, C34B 3500
Patent
active
059353252
ABSTRACT:
A weight control in diameter method by using a load cell is applied to a wire-single crystal silicon pulling mechanism, such that the weight of single crystal silicon can be correctly measured, thereby obtaining superior control in diameter and reducing the cost of manufacturing the single crystal silicon.
REFERENCES:
patent: 4794263 (1988-12-01), Katsuoka et al.
patent: 4915775 (1990-04-01), Katsuoka et al.
patent: 5378900 (1995-01-01), Hirano et al.
patent: 5653799 (1997-08-01), Fuerhoff
patent: 5660629 (1997-08-01), Shiraishi et al.
patent: 5665159 (1997-09-01), Fuerhoff
Hiraishi Yoshinobu
Kawabata Mitsunori
Tsuji Hideki
Yamagishi Ryo
Hiteshew Felisa
Komatsu Electronic Metals Co. Ltd.
LandOfFree
Apparatus for manufacturing a single crystal does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Apparatus for manufacturing a single crystal, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Apparatus for manufacturing a single crystal will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1116001