Apparatus for manufacturing a single crystal

Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus – For crystallization from liquid or supercritical state

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117200, 117201, 117202, C34B 3500

Patent

active

059353252

ABSTRACT:
A weight control in diameter method by using a load cell is applied to a wire-single crystal silicon pulling mechanism, such that the weight of single crystal silicon can be correctly measured, thereby obtaining superior control in diameter and reducing the cost of manufacturing the single crystal silicon.

REFERENCES:
patent: 4794263 (1988-12-01), Katsuoka et al.
patent: 4915775 (1990-04-01), Katsuoka et al.
patent: 5378900 (1995-01-01), Hirano et al.
patent: 5653799 (1997-08-01), Fuerhoff
patent: 5660629 (1997-08-01), Shiraishi et al.
patent: 5665159 (1997-09-01), Fuerhoff

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