Active solid-state devices (e.g. – transistors – solid-state diode – With means to control surface effects – Insulating coating
Patent
1991-11-27
1993-11-16
Hille, Rolf
Active solid-state devices (e.g., transistors, solid-state diode
With means to control surface effects
Insulating coating
257386, 257587, 257652, H01L 2972, H01L 2934
Patent
active
052626725
ABSTRACT:
A method and apparatus for reducing interconnection capacitance. A lightly doped buried layer is provided in or on a substrate below a field oxide region. The capacitance of an interconnect on the field oxide is significantly reduced by the lightly doped buried layer. When using a p-type substrate, the lightly doped buried layer may, for example, be a lightly doped (10.sup.13 /cm.sup.3) n-type region. Junction capacitance of, for example, a bipolar transistor is also reduced.
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Hille Rolf
National Semiconductor Corporation
Ostrowski David
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