Apparatus for improvement of interconnection capacitance

Active solid-state devices (e.g. – transistors – solid-state diode – With means to control surface effects – Insulating coating

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257386, 257587, 257652, H01L 2972, H01L 2934

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active

052626725

ABSTRACT:
A method and apparatus for reducing interconnection capacitance. A lightly doped buried layer is provided in or on a substrate below a field oxide region. The capacitance of an interconnect on the field oxide is significantly reduced by the lightly doped buried layer. When using a p-type substrate, the lightly doped buried layer may, for example, be a lightly doped (10.sup.13 /cm.sup.3) n-type region. Junction capacitance of, for example, a bipolar transistor is also reduced.

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