Apparatus for heating and cooling semiconductor wafers in semico

Adhesive bonding and miscellaneous chemical manufacture – Differential fluid etching apparatus – With microwave gas energizing means

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118724, 118723I, 156643, 20429809, 20429833, H01L 2100

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active

052483703

ABSTRACT:
A method for heating or cooling a semiconductor wafer in semiconductor processing apparatus is described which comprises directing into contact with a surface of the wafer at least a portion of one or more components of the process gas to transfer heat between the wafer and a wafer support positioned in the apparatus adjacent to the wafer. Method and apparatus are also described for controlling the total flow of process gas through the apparatus and for monitoring the pressure in said apparatus to maintain the desired pressure therein.

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patent: 4392915 (1983-07-01), Zajac
patent: 4466872 (1984-08-01), Einbinder
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patent: 4527620 (1985-07-01), Pedersen et al.
patent: 4565601 (1986-01-01), Kakehi et al.
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patent: 4743570 (1988-05-01), Lamont
patent: 4963713 (1990-10-01), Horiuchi
patent: 4980022 (1990-12-01), Fujimura et al.
IBM Technical Disclosure; "Cooling Ion-Implanted Target"; vol. 19, No. 6, 1976, pp. 2270-2271.
Nuclear Instruments And Methods; "Experiments on Gas Cooling of Wafers"; King et al., 189 (1981), 169-173.
European Search Report.

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