Apparatus for growing silicon crystals

Details Apparatus for growing silicon crystals Apparatus for growing silicon crystals

1997-05-09

1999-08-10

Hiteshew, Felisa

Single-crystal, oriented-crystal, and epitaxy growth processes;

Apparatus

For crystallization from liquid or supercritical state

117 32, 117218, 117917, C30B 3500

Patent

active

059353279

ABSTRACT:
An apparatus for producing silicon crystals (24) having highly uniform characteristics from a silicon melt (22) comprising a furnace (12), a crucible (14) disposed within the furnace (12) for containing the silicon melt (22), a heater (20) disposed around the crucible (14) for heating the silicon melt (22) and a pair of cusp magnets (28, 30) disposed around the furnace (12) and spaced a distance apart from one another such that the distance between the cusp magnets (28, 30) is variable.

REFERENCES:
patent: 4565671 (1986-01-01), Matutani et al.
patent: 4592895 (1986-06-01), Matsutani et al.
patent: 4830703 (1989-05-01), Matsutani
patent: 5009865 (1991-04-01), Boden et al.

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