Apparatus for growing low defect density silicon carbide

Details Apparatus for growing low defect density silicon carbide Apparatus for growing low defect density silicon carbide

2005-03-08

2005-03-08

Kunemund, Robert (Department: 1765)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Apparatus

With means for measuring, testing, or sensing

C117S088000, C117S107000, C117S108000, C117S109000, C117S200000, C117S902000

Reexamination Certificate

active

06863728

ABSTRACT:
A low defect (e.g., dislocation and micropipe) density silicon carbide (SiC) is provided as well as an apparatus and method for growing the same. The SiC crystal, grown using sublimation techniques, is preferably divided into two stages of growth. During the first stage of growth, the crystal grows in a normal direction while simultaneously expanding laterally. Although dislocations and other material defects may propagate within the axially grown material, defect propagation and generation in the laterally grown material are substantially reduced, if not altogether eliminated. After the crystal has expanded to the desired diameter, the second stage of growth begins in which lateral growth is suppressed and normal growth is enhanced. A substantially reduced defect density is maintained within the axially grown material that is based on the laterally grown first stage material.

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patent: 6508880 (2003-01-01), Vodakov
W. Bahng et al., “Rapid Enlargement of SiC Single Crystal Using a Cone-Shaped Platform”, Journal of Crystal Growth 209, (2000) pp. 767-772.
Wide Bandgap Semiconducting Materials and Devices Challenges, Naval Research Reviews, vol. 51, No. 1 (1999), pp. 1-71.

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