Apparatus for growing a single crystal

Details Apparatus for growing a single crystal Apparatus for growing a single crystal

1996-03-15

1998-03-31

Garrett, Felisa C.

Single-crystal, oriented-crystal, and epitaxy growth processes;

Apparatus

For crystallization from liquid or supercritical state

117200, 117900, C30B 3500

Patent

active

057333718

ABSTRACT:
According to the present invention, in the growth of an oxide single crystal or a compound semiconductor single crystal such as GaAs single crystal by the CZ method or LEC method, the tendency of concave solid-liquid interface shape at the periphery of the growing crystal can be suppressed to prevent polycrystallization without localized heating of the solid-liquid interface, while controlling the diameter of the growing crystal even when using a crucible with a larger diameter, thus improving the yield of crystal on a commercial scale. In the invention, the end of a cylindrical body having an inner diameter of larger than the predetermined diameter of straight part of the growing crystal is immersed in the raw material melt or liquid encapsulant and the crystal is pulled while preventing the shape of the solid-liquid interface from becoming concave by controlling the rotation rate of at least one of a crucible holding the raw material melt, the growing crystal and cylindrical body.

REFERENCES:
patent: 4167554 (1979-09-01), Fisher
patent: 4211600 (1980-07-01), Cole
patent: 4264385 (1981-04-01), Fisher
patent: 4539067 (1985-09-01), Washizuka et al.
patent: 4874458 (1989-10-01), Nishizawa
patent: 5394830 (1995-03-01), Azad
patent: 5471943 (1995-12-01), Scheel
In-Situ Observation of Solid-Liquid Interface Shape by X-Ray Radiography During Silicon Single Crystal Growth, 2300 Journal of Crystal Growth 91 (1988) Sep., No. 4, Amsterdam, The Netherlands.

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