Apparatus for gettering of particles during plasma processing

Coating apparatus – Gas or vapor deposition – With treating means

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118 501, 118620, C23C 1600, C23C 1400, B05C 500

Patent

active

053324412

ABSTRACT:
Apparatus for plasma processing involving the gettering of particles having a high charge to mass ratio away from a semiconductor wafer are disclosed. In one aspect of the invention, magnets are used to produce a magnetic field which is transverse to an electric field to draw the negative particles away from the wafer to prevent the formation of a sheath which can trap the particles. In a second aspect of the invention, a power source is connected to the wafer electrode to maintain a negative charge on the wafer, thereby preventing negative particles from being drawn to the wafer surface when the plasma is turned off. In other embodiments of the invention, a low density plasma source is used to produce a large plasma sheath which permits particles to cross a chamber to be gettered. A low density plasma discharge followed by a pulse to a higher density is used to overcome the negative effect of an insulating layer between the wafer and the wafer electrode.

REFERENCES:
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patent: 4492610 (1985-01-01), Okano et al.
patent: 4645546 (1987-02-01), Matsushita
patent: 4818359 (1989-04-01), Jones et al.
patent: 4931405 (1990-06-01), Kamijo et al.
John H. Keller et al., The Transport of Dust Particles in Glow Discharge Plasmas, International Business Machines Corporation.

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