Apparatus for forming transparent conductive film by sputtering

Details Apparatus for forming transparent conductive film by sputtering Apparatus for forming transparent conductive film by sputtering

1997-09-10

2000-04-25

McDonald, Rodney

Chemistry: electrical and wave energy

Processes and products

Coating, forming or etching by sputtering

20419212, 20419225, 20419226, 20429806, 20429823, 20429834, C23C 1434

Patent

active

060540249

ABSTRACT:
There are provided a method which, in forming a transparent conductive film by sputtering on a semiconductor junction layer provided on a conductive substrate which bears at least the transparent conductive film thereon, comprises steps of electrically insulating the conductive substrate, and maintaining the self bias voltage Vself of the conductive substrate within a range of -50 V.ltoreq.Vself<0 V, and an apparatus therefor. There can also be reduced the damage to the semiconductor layer, induced by the cations such as Ar.sup.+. Thus there can be produced the photovoltaic elements of a high open-circuit voltage and a high photoelectric conversion efficiency in stable manner.

REFERENCES:
patent: 4392931 (1983-07-01), Maniv et al.
patent: 4728406 (1988-03-01), Banerjee et al.
patent: 4816126 (1989-03-01), Kamoshida et al.
patent: 5135581 (1992-08-01), Tran et al.

Affiliated with

Also associated with

Rating

Apparatus for forming transparent conductive film by sputtering does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Apparatus for forming transparent conductive film by sputtering , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Apparatus for forming transparent conductive film by sputtering will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-990672