Apparatus for forming oxide film of semiconductor device

Details Apparatus for forming oxide film of semiconductor device Apparatus for forming oxide film of semiconductor device

1996-12-24

1998-07-14

Dutton, Brian

Semiconductor device manufacturing: process

With measuring or testing

Optical characteristic sensed

H01L 2166, G01R 3126

Patent

active

057803170

ABSTRACT:
An oxidizing apparatus and a method for forming an oxide film by controlling the oxide film growth using the same are provided. The apparatus includes an oxide film growing means, oxide film thickness measuring means and controlling means in order to form an oxide film of a desired thickness on a wafer. Here, the controlling means automatically calculates the oxide film growing time corresponding to a target thickness of an oxide film to be grown on the wafer. Accordingly, operation is simplified and a differing thicknesses of the oxide film in each batch is minimized, to thereby enhance reliability with respect to a precess and produce uniform product.

REFERENCES:
patent: 4141780 (1979-02-01), Kleinknecht et al.
patent: 5131752 (1992-07-01), Yu et al.

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