Coating processes – Direct application of electrical – magnetic – wave – or... – Plasma
Patent
1997-08-15
1999-12-14
Dang, Thi
Coating processes
Direct application of electrical, magnetic, wave, or...
Plasma
427569, 118723E, 118729, C23C 1600
Patent
active
060014326
ABSTRACT:
An apparatus for forming films on a substrate is described. The apparatus comprises a vacuum chamber, an evacuating system connected to the vacuum chamber for maintaining a predetermined pressure in the vacuum chamber, a power supply for generating electric energy at high frequencies, a first electrode disposed in the vacuum chamber and connected to the power supply for receiving the electric energy as a cathode, the substrate to be coated being mounted on the first electrode, a second electrode disposed in the vacuum chamber and grounded as an anode, an electric discharging region being formed between the first and second electrodes in order to generate a plasma region therebetween, and a gas feeding system connected to the vacuum chamber for feeding a reactive gas into the vacuum chamber through a gas outlet port formed on the second electrode. The first and second electrodes are located apart from each other by a distance of no wider than 10 mm thereby a high intensity plasma region is formed to make it possible to improve the deposition speed.
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Itoh Kenji
Yamazaki Shunpei
Costellia Jeffrey L.
Dang Thi
Ferguson Jr. Gerald J.
Semiconductor Energy Laboratory Co,. Ltd.
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