Chemistry: electrical and wave energy – Apparatus – Coating – forming or etching by sputtering
Patent
1991-06-28
1992-12-29
Weisstuch, Aaron
Chemistry: electrical and wave energy
Apparatus
Coating, forming or etching by sputtering
20429826, 156345, 118715, 118719, C23C 1434, C23C 1456
Patent
active
051748819
ABSTRACT:
A method of and an apparatus for removing a naturally grown oxide film and contaminants on the surface of a semiconductor substrate and then forming a thin film on the cleaned surface. The semiconductor substrate is placed in a pretreatment chamber and then hydrogen chloride gas is introduced into the chamber. Then, the semiconductor substrate is heated at a temperature between 200.degree..about.700.degree. C. and the surface of the semiconductor substrate is irradiated with ultraviolet rays, whereby the naturally grown oxide film and other contaminants on the semiconductor substrate can be removed. Then, a thin film is formed on the cleaned surface of the semiconductor substrate by a CVD method or a sputter method. According to this method, the naturally oxide film and other contaminants can be removed from the surface of the semiconductor substrate at a low temperature and the thin film can be formed on the cleaned surface. As a result, an interface structure between the semiconductor substrate and the thin film can be controlled to be in a preferable state.
REFERENCES:
patent: 4025410 (1977-05-01), Stewart
patent: 4183780 (1980-01-01), McKenna
patent: 4351714 (1982-09-01), Kuriyama
patent: 4597826 (1986-07-01), Majima et al.
patent: 4678536 (1987-07-01), Murayama et al.
patent: 4689112 (1987-08-01), Bersin
patent: 4716852 (1988-01-01), Tsujii
patent: 4724159 (1988-02-01), Yamazaki
patent: 4808553 (1989-02-01), Yamazaki
patent: 4871416 (1989-10-01), Fukuda
patent: 4902671 (1990-02-01), Koinuma
E. Kinsbron et al., Appl. Phys. Lett. vol. 42, No. 9, May 1, 1983, pp. 835-837.
R. Sugino et al., Extended Abstracts, 19th Conf. on Solid State Devices & Mat'ls, Tokyo (1987), pp. 207-210.
Itoh Hiromi
Iwasaki Masanobu
Mitsui Katsuyoshi
Tokui Akira
Tsukamoto Katsuhiro
Mitsubishi Denki & Kabushiki Kaisha
Weisstuch Aaron
LandOfFree
Apparatus for forming a thin film on surface of semiconductor su does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Apparatus for forming a thin film on surface of semiconductor su, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Apparatus for forming a thin film on surface of semiconductor su will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1884888