Semiconductor device having spiral electrode pattern

Details Semiconductor device having spiral electrode pattern Semiconductor device having spiral electrode pattern

1996-12-23

1998-07-14

Tran, Minh-Loan

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

257457, 257459, 257465, 257745, H01L 3100

Patent

active

057809151

ABSTRACT:
A semiconductor device having a spiral electrode pattern and fabrication method thereof. The device includes an undoped semiconductor substrate, a first and a second probing pads formed on the substrate, and a pair of electrode fingers extending spirally toward a concentric center from the respective first and second probing pads and interdigitated with each other. The method includes the steps of, patterning an insulation layer on a semiconductor substrate in a spiral structure, depositing a metal layer on the substrate including the insulation layer but excluding the sides of the insulation layer, and etching the insulation layer using a wet etching technique.

REFERENCES:
patent: 5451769 (1995-09-01), McAdoo et al.
Yang, L., et al., "High Performance of Fe:InP/InGaAs Metal/Semiconductor/Metal Photodetectors Grown by Metalorganic Vapor Phase Epitaxy," IEEE Photonics Technol. Letts., vol. 2, No. 1, Jan. 1990, pp. 56-58.
Kuhl, D., et al., "Inductive Bandwidth Enhancement of Sub-.mu.m InAlAs-InGaAs MSM Photodetectors," IEEE Photonics Technol. Letts., vol. 7, No. 4, Apr. 1995, pp. 421-423.
Bottcher, E. Holger, et al., "MSM Photodetectors: Modeling and Performance," IEEE J. Quantum Elec., vol. 28, No. 10, Oct. 1992, pp. 2343-2357.

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