Apparatus for forming a dielectric layer

Coating apparatus – Gas or vapor deposition – With treating means

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

118723R, C23C 1600

Patent

active

055607780

ABSTRACT:
A deposition rate of a dielectric material is varied with the electrical polarity of an underlying layer to obtain excellent deposition and planarization characteristics. A conductive layer and the underlying dielectric are surface-treated to have different electrical polarities so that the dielectric is formed by using the difference of deposition rates of the dielectric material between that on the conductive layer and that on the underlying dielectric. A CVD apparatus having a DC power source connected between a susceptor and a gas injection portion thereof is provided. The deposition and planarization can be performed at low temperatures and are simplified in process.

REFERENCES:
patent: 5110619 (1992-05-01), Ogumi et al.
patent: 5221416 (1993-06-01), Kishi et al.
patent: 5366555 (1994-11-01), Kelly
patent: 5456757 (1995-10-01), Aruga et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Apparatus for forming a dielectric layer does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Apparatus for forming a dielectric layer, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Apparatus for forming a dielectric layer will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1499762

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.