Coating apparatus – Gas or vapor deposition – With treating means
Patent
1995-06-05
1996-10-01
Breneman, R. Bruce
Coating apparatus
Gas or vapor deposition
With treating means
118723R, C23C 1600
Patent
active
055607780
ABSTRACT:
A deposition rate of a dielectric material is varied with the electrical polarity of an underlying layer to obtain excellent deposition and planarization characteristics. A conductive layer and the underlying dielectric are surface-treated to have different electrical polarities so that the dielectric is formed by using the difference of deposition rates of the dielectric material between that on the conductive layer and that on the underlying dielectric. A CVD apparatus having a DC power source connected between a susceptor and a gas injection portion thereof is provided. The deposition and planarization can be performed at low temperatures and are simplified in process.
REFERENCES:
patent: 5110619 (1992-05-01), Ogumi et al.
patent: 5221416 (1993-06-01), Kishi et al.
patent: 5366555 (1994-11-01), Kelly
patent: 5456757 (1995-10-01), Aruga et al.
Chung U-In
Hong Chang-Gee
Kim Chang-Gyu
Lee Myoung-Bum
Park In-Seon
Breneman R. Bruce
Paladugu Ramamohan Rao
Samsung Electronics Co,. Ltd.
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