Apparatus for forming a copper interconnect

Chemistry: electrical and wave energy – Apparatus – Electrolytic

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204288, 204289, C25B 1100

Patent

active

06106680&

ABSTRACT:
A method and apparatus for fabricating electrochemical copper interconnections between the component parts of an integrated circuit on a semiconductor device. A cathodic platter is provided that includes contact pins that contact the surface of a semiconductor wafer at predetermined locations during the electrochemical deposition process. The contact pins are arranged on the cathodic platter so that when placed on the surface of the semiconductor wafer the contact pins surround the perimetrical edges of each respective semiconductor device on the semiconductor wafer. Once the semiconductor wafer is properly positioned on the cathodic platter, a copper conductive layer can be electrochemically and uniformly deposited on the surface of the semiconductor device.

REFERENCES:
patent: 5656147 (1997-08-01), Ishimoto et al.

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