Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus – For crystallization from liquid or supercritical state
Patent
1998-02-02
2000-08-22
Hiteshew, Felisa
Single-crystal, oriented-crystal, and epitaxy growth processes;
Apparatus
For crystallization from liquid or supercritical state
117 18, 117 33, 117900, C30B 3500
Patent
active
061066176
ABSTRACT:
A method of an apparatus for automatically and rapidly feeding raw material into a quartz crucible in manufacture of single-crystal silicon by CZ method. After a draining hose 203 is disposed in a quartz crucible 201, pure water is supplied from a water supply hose 204, and the quartz crucible 201 is conveyed onto a turn table 213 installed under a container 210. At this time, the quartz crucible 201 is rotated, and lump raw material 209 is fed into the quartz crucible 201. Since buoyancy of the pure water is applied to the lump material 209, impacts caused by the falling lump material can be moderated, and therefore, damages to the quartz crucible 201 can be prevented. After feeding raw material is finished, the pure water is discharged through a draining hose 203, and then the draining hose 203 is retracted from the quartz crucible 201. Thereafter, the quartz crucible 201 is conveyed into a microwave oven 211 for drying.
REFERENCES:
patent: 5580171 (1996-12-01), Lim et al.
patent: 5588993 (1996-12-01), Holder
patent: 5868835 (1999-02-01), Nagai et al.
Hiteshew Felisa
Komatsu Electronic Metals Co. Ltd.
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