Apparatus for fabricating spherical shaped semiconductor integra

Coating apparatus – Gas or vapor deposition

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118723E, 118724, 156345, 20429802, 20429807, 20429809, C23C 1600

Patent

active

059750111

ABSTRACT:
An apparatus and method for fabricating integrated circuits according to which a plurality of members of a semiconductor material are continuously introduced into a chamber. A process gas is introduced into the chamber in a direction extending at an angle to the direction of passage of the members into the chamber in a manner so that the gas contacts the members during its passage through the chamber to treat the members.

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patent: 5792269 (1998-08-01), Deacon et al.
patent: 5851294 (1998-12-01), Young et al.
patent: 5876504 (1999-03-01), Fuji et al.
Wang, Ma, Golz, Halpern & Schmitt/High-Quality MNS Capacitors Prepared by Jet Vapor Deposition at Room Temperature/ 1992 IEEE Magazine pp. 482-484.
Heberlein & Pfender/Thermal Plasma Chemical Vapor Deposition/ 1993 Materials Science Forum vol. 140-142, pp. 477, 480-498.
Kong & Pfender/Synthesis of Ceramic Powders in a Thermal DC Plasma Jet by Injection of Liquid Precursors/ 1988 Proc. 2nd Int. Conf. Ceram. Powder Proc., pp. 237-243.
U.S. Serial No. 08/858,004, filed on May 16, 1997, Shperical Shaped Semiconductor Integrated Circuit, Akira Ishikawa, Abstract and 15 sheets of drawings.

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