Apparatus for fabricating single-crystal silicon

Details Apparatus for fabricating single-crystal silicon Apparatus for fabricating single-crystal silicon

1997-05-21

2000-06-06

Kunemund, Robert

Single-crystal, oriented-crystal, and epitaxy growth processes;

Apparatus

For crystallization from liquid or supercritical state

117201, 117217, 117218, 117932, C30B 1514

Patent

active

060713410

ABSTRACT:
An apparatus for fabricating single-crystal silicon easily controlling a temperature gradient based on the Czochralski (CZ) method, and more particularly preventing as-grown defects created in order to obtain high-quality single-crystal silicon.
The above-mentioned apparatus includes a first thermal shield member surrounding the pulling single-crystal silicon and a second thermal shield member inside the first thermal shield member, surrounding the pulling single-crystal silicon. The second thermal shield member is fixed on the first thermal shield member by a support located on the external surface of the second thermal shield member and connected to the first thermal shield member. The surroundings of a solid-liquid interface are extremely cooled by using the first thermal shield member, thereby a stable shape of the single-crystal silicon is formed. The temperature gradient of the temperature region of 1000.degree. C..about.1200.degree. C. where the single-crystal silicon passes is decreased by using the second thermal shield member so as to reduce the crystal defect density, thereby obtaining single-crystal silicon having a stronger oxide film voltage breakdown characteristic. If the support length is changed, the second thermal shield member can be adjusted in the upper or lower direction in order to make the expected portion of single-crystal silicon cool slowly.

REFERENCES:
patent: 4956153 (1990-09-01), Yamagishi
patent: 5260037 (1993-11-01), Kitaura
patent: 5316742 (1994-05-01), Tomioka
patent: 5441014 (1995-08-01), Tomioka
patent: 5443034 (1995-08-01), Everts

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