Apparatus for fabricating polysilicon film for semiconductor dev

Details Apparatus for fabricating polysilicon film for semiconductor dev Apparatus for fabricating polysilicon film for semiconductor dev

1997-06-09

2000-03-21

Bueker, Richard

Coating apparatus

Gas or vapor deposition

Multizone chamber

118724, 118729, C23C 1600

Patent

active

060398116

ABSTRACT:
An apparatus for fabricating a semiconductor device having cooling jackets for preventing a gas from being exuded in a reaction chamber, thereby minimizing the generation of contaminating particles. The apparatus includes a reaction chamber having four cooling jackets respectively mounted on a first side wall adjacent to a wafer transfer chamber, a second side wall opposite to the first side wall, an upper wall and a bottom wall. A gate valve is disposed between the reaction chamber and the wafer transfer chamber and has a fifth cooling jacket. While fabricating a polysilicon film using the above apparatus, a pressure of a cassette chamber is controlled to be less than about 0.05 mtorr. Alternatively, a pressure of a cooling chamber and the wafer transfer are both controlled to be less than about 1.0 .mu.torr.

REFERENCES:
patent: 5119761 (1992-06-01), Nakata
patent: 5234862 (1993-08-01), Aketagawa et al.
patent: 5284521 (1994-02-01), Aketagawa et al.
patent: 5385863 (1995-01-01), Tatsumi et al.
patent: 5453125 (1995-09-01), Krogh

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