Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus
Reexamination Certificate
2006-01-03
2009-08-11
Kunemund, Robert M (Department: 1792)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Apparatus
C117S211000, C117S217000, C118S058000, C118S300000
Reexamination Certificate
active
07572334
ABSTRACT:
A method and apparatus for forming a semiconductor sheet suitable for use as a solar cell by depositing an array of solidified drops of a feed material on a sheet support. The desired properties of the sheet fabricated with the teaching of this invention are: flatness, low residual stress, minority carrier diffusion length greater than 40 microns, and minimum grain dimension at least two times the minority carrier diffusion length. In one embodiment, the deposition chamber is adapted to form and process sheets that have a surface area of about 1,000-2,400 cm2.
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Bachrach Robert Z.
Kholodenko Arnold V.
Mandelboym Mark
Applied Materials Inc.
Kunemund Robert M
Psatterson & Sheridan LLP
Rao G. Nagesh
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