Apparatus for fabricating a single-crystal semiconductor

Details Apparatus for fabricating a single-crystal semiconductor Apparatus for fabricating a single-crystal semiconductor

1997-02-18

1998-12-29

Garrett, Felisa C.

Single-crystal, oriented-crystal, and epitaxy growth processes;

Apparatus

For crystallization from liquid or supercritical state

117213, 117222, C30B 3500

Patent

active

058534806

ABSTRACT:
An apparatus and a method for fabricating a single-crystal semiconductor by means of a CZ method are provided for improving the quality through modification of the thermal cycle of a pulled single-crystal semiconductor. The apparatus includes a ring-shaped after heater which is capable of elevation. The method decreases the temperature gradient to smaller than 20.degree. C./cm, and preferably under 15.degree. C./cm, when the pulled single-crystal semiconductor is cooled from 1200.degree. C. to 1000.degree. C. The after heater therefore heats the single-crystal semiconductor where there is a temperature of 100.degree.-300.degree. C. lower than the range of 1200.degree.-1000.degree. C. A thermal baffle (or shield) is provided to retain a temperature gradient of larger than 20.degree. C./cm when the single-crystal semiconductor is within the temperature range between the melting point and 1250.degree. C. The after heater and the baffle (or shield) can be raised to an upper portion when polysilicon blocks are charged and a twisting step is carried out.

REFERENCES:
patent: 4203951 (1980-05-01), Coriletsky et al.
patent: 4944925 (1990-07-01), Yamauchi et al.
patent: 5132091 (1992-07-01), Azad
patent: 5137699 (1992-08-01), Azad
patent: 5443034 (1995-08-01), Everts
patent: 5551978 (1996-09-01), Akashi et al.

Affiliated with

Also associated with

Rating

Apparatus for fabricating a single-crystal semiconductor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Apparatus for fabricating a single-crystal semiconductor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Apparatus for fabricating a single-crystal semiconductor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1420055