Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus – For crystallization from liquid or supercritical state
Patent
1996-12-13
1998-07-28
Garrett, Felisa
Single-crystal, oriented-crystal, and epitaxy growth processes;
Apparatus
For crystallization from liquid or supercritical state
117208, 117217, 117222, C30B 3500
Patent
active
057857571
ABSTRACT:
The present invention provides a method and an apparatus for fabricating a single-crystal semiconductor by means of the CZ method in which the oxygen concentration in the single-crystal semiconductor is controlled within an acceptable range. The apparatus comprises a regulating cylinder concentrically covering the single-crystal semiconductor which is pulled from a melt in a crucible; a main chamber for isolating the growing single-crystal semiconductor from external atmosphere; and a falling gas introducing means on top of the main chamber for introducing an inert gas into the main chamber. The apparatus is characterized in that a whirling gas introducing means on a circumferential portion of the main chamber introduces an whirling inert gas into the main chamber in a tangential direction to the side walls of the main chamber and the regulating cylinder.
REFERENCES:
patent: 3261671 (1966-07-01), Jonge et al.
patent: 4330361 (1982-05-01), Kuhn-Kuhvenfeld et al.
patent: 4358416 (1982-11-01), Yarwood et al.
Garrett Felisa
Komatsu Electronic Metals Co. Ltd.
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