Apparatus for fabricating a semiconductor single crystal

Details Apparatus for fabricating a semiconductor single crystal Apparatus for fabricating a semiconductor single crystal

1997-02-24

1998-06-16

Garrett, Felisa

Single-crystal, oriented-crystal, and epitaxy growth processes;

Apparatus

For crystallization from liquid or supercritical state

117200, 117222, 117900, C30B 3500

Patent

active

057663475

ABSTRACT:
An apparatus for fabricating a semiconductor single crystal, which make it possible to reduce the oxygen concentration of a pulling single crystal, to steadily dissolve the polysilicon material received in a crucible, and to minimize the cost and installation space, is provided.
The hollow cylindrical resistance heater of the apparatus, which co-axially surrounds a crucible, is provided with a ring-shaped slit excluding the location where at least two electrodes are formed, in a direction substantially perpendicular to the axial direction so as to divide the heater into an upper heating portion and a lower heating portion, and is provided with a plurality of vertical slits formed on the upper heating portion and the lower heating portion respectively, in a direction substantially parallel to the axial direction, wherein each vertical slit formed on the upper heating portion does not align with each vertical slit formed on the lower heating portion. The vertical slits formed on the upper heating portion and the slits formed on the lower heating portion have different pitches. The thickness or length of the upper heating portion is different from that of the lower heating portion.

REFERENCES:
patent: 3608050 (1971-09-01), Carmen et al.
patent: 5116456 (1992-05-01), Nester
patent: 5330729 (1994-07-01), Oda et al.
patent: 5363796 (1994-11-01), Kobayashi et al.

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