Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Reexamination Certificate
2006-01-04
2008-10-21
Kunemund, Robert M. (Department: 1792)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With decomposition of a precursor
C117S084000, C117S088000, C117S099000, C117S952000
Reexamination Certificate
active
07438761
ABSTRACT:
A hydrogen chloride gas and an ammonia gas are introduced with a carrier gas into a reactor in which a substrate and at least an aluminum metallic material through conduits. Then, the hydrogen gas and the ammonia gas are heated by heaters, and thus, a III-V nitride film including at least Al element is epitaxially grown on the substrate by using a Hydride Vapor Phase Epitaxy method. The whole of the reactor is made of an aluminum nitride material which does not suffer from the corrosion of an aluminum chloride gas generated by the reaction of an aluminum metallic material with a hydrogen chloride gas.
REFERENCES:
patent: 4382776 (1983-05-01), Kawase et al.
patent: 4644780 (1987-02-01), Jeter
patent: 4830982 (1989-05-01), Dentai et al.
patent: 5334277 (1994-08-01), Nakamura
patent: 5599732 (1997-02-01), Razeghi
patent: 5614249 (1997-03-01), Mayeda
patent: 5650361 (1997-07-01), Radhakrishnan
patent: 5728940 (1998-03-01), Kim et al.
patent: 5993542 (1999-11-01), Yanashima et al.
patent: 6086673 (2000-07-01), Molnar
patent: 6117213 (2000-09-01), Ueda et al.
patent: 6197683 (2001-03-01), Kang et al.
patent: 6218269 (2001-04-01), Nikolaev et al.
patent: 6271104 (2001-08-01), Razeghi et al.
patent: 6533874 (2003-03-01), Vaudo et al.
patent: 6596079 (2003-07-01), Vaudo et al.
patent: 0 763 610 (1997-03-01), None
patent: 1 127 957 (2001-08-01), None
patent: 1 160 354 (2001-12-01), None
patent: 02034592 (1990-02-01), None
patent: 7-153706 (1995-06-01), None
patent: 10-067584 (1998-03-01), None
patent: 11-080961 (1999-03-01), None
Patent Abstracts of Japan, English Abstract of JP 2000-091234. (Mar. 31, 2000).
“Powder-Preparation Method,” IBM Technical Disclosure Bulletin, IBM Corp., NY, US, vol. 32, No. 9B, Feb. 1, 1990, pp. 355-357.
Chani V. I. et al., “Segregation and Uniformity of K3Li2(Ta,NB)5O15Fiber Crystals Grown by Micro-Pulling-Down Method,” Journal of Crystal Growth, North-Holland Publishing Co., Amsterdam, NL, vol. 194, No. 3/4, Dec. 1998, pp. 374-378.
Asai Keiichiro
Shibata Tomohiko
Tanaka Mitsuhiro
Burr & Brown
Kunemund Robert M.
NGK Insulators Ltd.
Song Matthew J
LandOfFree
Apparatus for fabricating a III-V nitride film and a method... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Apparatus for fabricating a III-V nitride film and a method..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Apparatus for fabricating a III-V nitride film and a method... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4015368