Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified configuration
Patent
1997-11-24
2000-02-15
Whitehead, Jr., Carl
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified configuration
257773, 257203, H01L 2348
Patent
active
060256478
ABSTRACT:
Disclosed is a redistribution layer having a patterned metallization layer for use in a flip chip integrated circuit device and a method for making the same. The redistribution layer includes a plurality of slot pads arranged along a periphery of the redistribution layer. The plurality of slot pads are formed from the patterned metallization layer. An array of bump pads are arranged in an inner portion of the redistribution layer such that the plurality of slot pads surround the array of bump pads, and the array of bump pads are formed from the patterned metallization layer. The redistribution layer further includes a plurality of traces that are formed from the patterned metallization layer and are configured to interconnect the plurality of slot pads to the array of bump pads. Each of the traces has a width that is selected to substantially equalize a resistance parameter associated with each of the plurality of traces. Additionally, each trace may include a bump pad area and possibly capacitance extending stubs that may be custom sized to substantially equalize a capacitance parameter associated with each of the plurality of traces.
REFERENCES:
patent: 5473195 (1995-12-01), Koike
Shenoy Jayarama N.
Wheeler Richard L.
Jr. Carl Whitehead
Potter Roy
VLSI Technology Inc.
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