Static information storage and retrieval – Read/write circuit – Testing
Reexamination Certificate
2007-05-01
2007-05-01
Nguyen, Tuan T. (Department: 2824)
Static information storage and retrieval
Read/write circuit
Testing
C365S200000, C365S189070
Reexamination Certificate
active
11205634
ABSTRACT:
An architecture for dynamically repairing a semiconductor memory, such as a Dynamic Random Access Memory (DRAM), includes circuitry for dynamically storing memory element remapping information. Memory is tested for errors by writing, then reading a plurality of memory blocks, such as rows or columns, in parallel. Memory is dynamically reprogrammed in order to remap unused spare memory elements for failed memory elements when errors are detected. Unused spare memory elements are remapped utilizing a circuit that overrides unblown fuses or antifuses.
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Baum Aaron M.
Callaway Brian P.
Micron TEchnology, Inc.
Nguyen Tuan T.
TraskBritt PC
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